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Kingston KVR32N22D8/16 16GB DDR4 3200Mhz Non ECC Memory RAM DIMM
SAR 289Memory Capacity 16GB Module Quantity 1 Module Speed 3200MHz (PC4-25600) Error Check Non-ECC Model/Series/Type ValueRAM Module Type DIMM CAS Latency CL22 Form Factor DDR4
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Kingston ValueRAM 16GB 3200MHz DDR4 CL22 DIMM Single RAM
SAR 195• Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 16 internal banks; 4 groups of 4 banks each • Fixed burst chop (BC) of 4 and…
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Kingston ValueRAM 32GB 2666MHz DDR4 CL19 DIMM Single RAM
SAR 599• Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Dual-rank • On-board I2 serial presence-detect (SPD) EEPROM • 16 internal banks; 4 groups of 4 banks each • Fixed burst chop (BC) of 4 and…
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Kingston ValueRAM 32GB 3200MHz DDR4 CL22 DIMM Single RAM
Save7.2%Save SAR 30OnlySAR 389 SAR 389• Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Dual-rank • On-board I2 serial presence-detect (SPD) EEPROM • 16 internal banks; 4 groups of 4 banks each • Fixed burst chop (BC) of 4 and…
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Kingston ValueRAM 8GB 1600MHz DDR3 CL11 DIMM Single RAM
SAR 224• JEDEC standard 1.5V Power Supply • VDDQ = 1.5V • 800MHz fCK for 1600Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL – 2, or CL – 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional…
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Kingston ValueRAM 8GB 1600MHz DDR3L CL11 SODIMM Single RAM
SAR 210• JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply • VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) • 800MHz fCK for 1600Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL – 2, or CL – 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does…
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Kingston ValueRAM 8GB 2666MHz DDR4 CL19 DIMM Single RAM
SAR 125• Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 8 internal banks; 2 groups of 4 banks each • Fixed burst chop (BC) of 4 and…
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Kingston ValueRAM 8GB 2666MHz DDR4 CL19 SODIMM Single RAM
SAR 112• Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 8 internal banks; 2 groups of 4 banks each • Fixed burst chop (BC) of 4 and…
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Lexar ARES OC 16GB (1x 16GB) DDR5 4800MHz Memory
SAR 292Lexar 16GB DDR5 4800MHz On-die ECC design for improved stability Low voltage of just 1.1 V for increased power efficiency Passive cooling via sleek aluminum heat spreaders
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Lexar DDR4 3200MHZ DIMM – 32GB – LD4AU032G-B3200GSST
SAR 369Improve your computer’s performance High speed DDR4 memory Easy to install Simple upgrade Lifetime limited warranty
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Lexar DIMM 8GB, DDR4-2666, CL19
SAR 89TypeDDR4 DIMM 288-Pin clock2666MHz Modules1x 8GB JEDECPC4-21300U CAS Latency CL19 (conforms ~14.25ns) Voltage1.2V
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Samsung 1x 16GB DDR4-3200 ECC UDIMM PC4-25600E Single Rank x8 Module
Save7.9%Save SAR 30OnlySAR 349 SAR 349Capacity 16GB Memory Type DDR4 ECC ECC DIMM Type UDIMM Rank 1Rx8 Speed 3200 Voltage 1.2V Height STD
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Samsung 1x 8GB DDR5 4800MHz PC5-38400 UDIMM NON-ECC UNBUFFERED OEM Memory M323R1GB4BB0-CQK
Save9.4%Save SAR 14OnlySAR 135 SAR 135Capacity: 8GB Kit: 1x 8 GB Standard / Generation: DDR5 Rank: 1Rx16 Module speed: PC5-38400 Frequency: 4800MHz
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Samsung 970 Evo Plus M.2 SSD
Save up to26.8%Save up to SAR 80OnlySAR 199 SAR 199 – SAR 999The ultimate in performance, upgraded. Faster than the 970 EVO, the 970 EVO Plus is powered by the latest V-NAND technology and firmware optimisation. It maximises the potential of NVMe bandwidth for unbeatable computing in capacities up to 2TB, with reliability of up to 1,200 TBW.
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Samsung Desktop Memory UDIMM 2666 Mbps
Save up to32%Save up to SAR 60OnlySAR 85 SAR 85 – SAR 169Proven DRAM module solution in the global market Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.
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Samsung Laptop Memory DDR4 SODIMM 3200 Mbps
Save up to39.4%Save up to SAR 246OnlySAR 379 SAR 37932GB32GBProven DRAM module solution in the global market Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.
