• Kingston ValueRAM 16GB 2666MHz DDR4 CL19 SODIMM Single RAM

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Dual-rank • On-board I2 serial presence-detect (SPD) EEPROM • 16 internal banks; 4 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston ValueRAM 16GB 3200MHz DDR4 CL22 DIMM Single RAM

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 16 internal banks; 4 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston ValueRAM 32GB 2666MHz DDR4 CL19 DIMM Single RAM

      32.2% ر.س 193ر.س 406

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Dual-rank • On-board I2 serial presence-detect (SPD) EEPROM • 16 internal banks; 4 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston ValueRAM 32GB 2666MHz DDR4 CL19 SODIMM Single RAM

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Dual-rank • On-board I2 serial presence-detect (SPD) EEPROM • 16 internal banks; 4 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston ValueRAM 32GB 3200MHz DDR4 CL22 DIMM Single RAM

      21.5% ر.س 90ر.س 329

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Dual-rank • On-board I2 serial presence-detect (SPD) EEPROM • 16 internal banks; 4 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston ValueRAM 4GB 1600MHz DDR3 CL11 DIMM Single RAM

      • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 800MHz fCK for 1600Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL – 2, or CL – 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using…

    • Kingston ValueRAM 4GB 2666MHz DDR4 CL19 DIMM Single RAM

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 8 internal banks; 2 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston ValueRAM 4GB 2666MHz DDR4 CL19 SODIMM Single RAM

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 8 internal banks; 2 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston ValueRAM 8GB 1600MHz DDR3 CL11 DIMM Single RAM

      6.7% ر.س 15ر.س 209

      • JEDEC standard 1.5V  Power Supply • VDDQ = 1.5V • 800MHz fCK for 1600Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL – 2, or CL – 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional…

    • Kingston ValueRAM 8GB 1600MHz DDR3L CL11 SODIMM Single RAM

      5.2% ر.س 11ر.س 199

      • JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply • VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) • 800MHz fCK for 1600Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL – 2, or CL – 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does…

    • Kingston ValueRAM 8GB 2666MHz DDR4 CL19 DIMM Single RAM

      35.2% ر.س 44ر.س 81

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 8 internal banks; 2 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston ValueRAM 8GB 2666MHz DDR4 CL19 SODIMM Single RAM

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 8 internal banks; 2 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston XS2000 External Solid State Drive (SSD) USB Type-C 3.2 Gen 2×2 Portable Drive

      35.8% ر.س 306ر.س 549

      2000GB Includes rubber sleeve and USB-C cable USB 3.2 Gen 2×2 Up to 2000MB/s read, 2000MB/s write

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