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    • Kingston ValueRAM 16GB 2666MHz DDR4 CL19 SODIMM Single RAM

      SAR 405

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Dual-rank • On-board I2 serial presence-detect (SPD) EEPROM • 16 internal banks; 4 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston ValueRAM 16GB 2666MHz DDR4 CL19 SODIMM Single RAM

      SAR 405

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 16 internal banks; 4 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston ValueRAM 16GB 3200MHz DDR4 CL22 DIMM Single RAM

      SAR 415

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 16 internal banks; 4 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston ValueRAM 4GB 1600MHz DDR3 CL11 DIMM Single RAM

      SAR 129

      • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 800MHz fCK for 1600Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL – 2, or CL – 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using…

    • Kingston ValueRAM 4GB 2666MHz DDR4 CL19 DIMM Single RAM

      SAR 410

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 8 internal banks; 2 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston ValueRAM 4GB 2666MHz DDR4 CL19 SODIMM Single RAM

      SAR 119

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 8 internal banks; 2 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston ValueRAM 8GB 1600MHz DDR3L CL11 SODIMM Single RAM

      SAR 255

      • JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply • VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) • 800MHz fCK for 1600Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL – 2, or CL – 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does…

    • Kingston ValueRAM 8GB 2666MHz DDR4 CL19 DIMM Single RAM

      SAR 215

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 8 internal banks; 2 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Kingston ValueRAM 8GB 2666MHz DDR4 CL19 SODIMM Single RAM

      SAR 209

      • Power Supply: VDD = 1.2V Typical • VDDQ = 1.2V Typical • VPP = 2.5V Typical • VDDSPD = 2.2V to 3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Low-power auto self refresh (LPASR) • Data bus inversion (DBI) for data bus • On-die VREFDQ generation and calibration • Single-rank • On-board I2 serial presence-detect (SPD) EEPROM • 8 internal banks; 2 groups of 4 banks each • Fixed burst chop (BC) of 4 and…

    • Lexar® DDR4-2666 SODIMM Laptop Memory (1x4GB) – LD4AS004G-R2666G

      SAR 109

      Improve your computer’s performance High speed DDR4 memory Easy to install Simple upgrade Lifetime limited warranty

    • Lexar® DDR4-2666 SODIMM Laptop Memory (1x8GB) – LD4AS008GR2666G

      SAR 169

      Improve your computer’s performance High speed DDR4 memory Easy to install Simple upgrade Lifetime limited warranty

    • Lexar® DDR4-2666 UDIMM Desktop Memory (1x8GB) – LD4AU008G-R2666G

      SAR 169

      Improve your computer’s performance High speed DDR4 memory Easy to install Simple upgrade Lifetime limited warranty

    • Samsung 970 Evo Plus M.2 SSD

      SAR 399
      250GB250GB
      500GB500GB
      1TB1TB
      2TB2TB

      The ultimate in performance, upgraded. Faster than the 970 EVO, the 970 EVO Plus is powered by the latest V-NAND technology and firmware optimisation. It maximises the potential of NVMe bandwidth for unbeatable computing in capacities up to 2TB, with reliability of up to 1,200 TBW.

    • Samsung 970 Evo Pro M.2 SSD

      11.4% SAR 74SAR 575 SAR 575
      512GB512GB
      1TB1TB

      The ultimate in performance, upgraded. Faster than the 970 EVO, the 970 EVO Plus is powered by the latest V-NAND technology and firmware optimisation. It maximises the potential of NVMe bandwidth for unbeatable computing in capacities up to 2TB, with reliability of up to 1,200 TBW. ( Part # MZ-V7P1T0BW , MZ-V7P512BW )

    • Samsung Desktop Memory UDIMM 2666 Mbps

      SAR 189SAR 349
      16GB16GB
      4GB4GB
      8GB8GB

      Proven DRAM module solution in the global market Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.

    • Samsung Laptop Memory SODIMM 2666 Mbps

      SAR 195
      16GB16GB
      8GB8GB

      Proven DRAM module solution in the global market Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.

    • Samsung PC Memory UDIMM 2933

      SAR 195
      16GB16GB
      4GB4GB
      8GB8GB

      Proven DRAM module solution in the global market Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.

    • Samsung Server memory DDR4 ECC UDIMM 2666Mbps 1.2V

      29.8% SAR 276SAR 649 SAR 649
      32GB32GB
      8GB8GB

      Proven DRAM module solution in the global market Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.

    • V-Color 128GB (2x64GB) DDR4 2933MHz Ram for Apple Mac Pro 2019 – (VHA21ASDRAG4T-CG29RD)

      SAR 2,999

      128GB(64GBx2) | DDR4 2933MHz(PC4-23400) | ECC Registered DIMM | For all Mac Pro 2019 Models, MacPro7,1 (2.5GHz 28-Core, 2.7GHz 24-Core, 3.2GHz 16-Core, 3.3GHz 12-Core, 3.5GHz 8-Core) Designed and tested for compatibility in various server systems Operating Environment : 0°C ~ 85°C. Please Note : Desktop PC is not compatible with Server memory Strictly audited DRAM chips with top quality 10-layers of PCBs. Each IC is tested rigorously with auto sorting equipment designed by v-color. Limited lifetime warranty

    • V-Color 16GB(2x8GB) DDR4 2666MHz RAM for Apple iMac 2020 & Late 2019 – (VHA19ASSR8G8T-8G26SD)

      SAR 399

      16GB (2 x 8GB) DDR4 Hynix IC 260-Pin 2666MHz (PC4-21300) 1Rx8 Single Rank CL19 SO-DIMM 1.2V Laptop Memory Module Upgrade for iMac, MacBook Pro, Mac Book, Mac Mini. Please note that this module is not compatible with early 2019 iMac. Compatible with 2019 iMac w/ Retina 5K Display model ID: iMac 19,1 (i5 3.0GHz, i5 3.1GHz, i5 3.7GHz, i9 3.6GHz) Compatible with Mid 2020 iMac w/ Retina 5K Display model ID: iMac 20,1 / iMac 20,2 (i5 3.1GHz, i5 3.3GHz, i7 3.8GHz, i9…

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